POWER SEMICONDUCTOR DEVICE

摘要

A power semiconductor device including a non-doped GaN channel layer (1), an n-type Al0.2Ga0.8N barrier layer (2) formed on the channel layer (1), a p-type Al0.1Ga0.9N semiconductor layer (3) selectively formed on the barrier layer (2), a drain electrode (4) positioned at one of both sides of the semiconductor layer (3) and formed on the barrier layer (2), an insulating film (7) formed on the barrier layer (2) adjacent to the semiconductor layer (3) between at least semiconductor layer (3) and drain electrode (4), and a field plate electrode (8) formed on the insulating film (7).