摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a multi-chip semiconductor device which has a small plan area and excellent thermal dissipation. <P>SOLUTION: In the multi-chip semiconductor device constituted by laminating chips 1<SB>1</SB>, 1<SB>2</SB>and 1<SB>3</SB>having silicon substrates 2 on which elements are integrally formed, a connecting substrate 31<SB>1</SB>having through-holes in which conductive plugs 4 are formed is provided between the two upper and lower adjoining chips 1<SB>1</SB>and 1<SB>2</SB>. The chips 1<SB>1</SB>and 1<SB>2</SB>are electrically connected through the conductive plugs 4. A metal plate 32 with a higher thermal conductivity than that of the connecting substrate 31<SB>1</SB>is provided therein. The chips 1<SB>2</SB>and 1<SB>3</SB>are connected and improved in thermal dissipation by a similar technique. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |