| 摘要 |
An invention is provided for reducing subthreshold current in memory core cells. A memory array having a plurality of memory core cells is provided. Each memory core cell in the memory array is selectable using a wordline. A selected wordline addressing a particular memory core cell is charged to a positive voltage. In addition, unselected wordlines of the memory array are charged to a negative voltage. In this manner, subthreshold current associated with unselected memory core cells is reduced.
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