METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE BY USING LPCVD METHOD AND PECVD METHOD

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to improve characteristics and reliability of the semiconductor device by using a CVD method for burying a contact hole. CONSTITUTION: A barrier metal layer(3) is formed on a planarized insulating layer(2) having a contact hole. A plasma process is performed on a surface of the barrier metal layer. A nucleus(5) is generated on the surface of the barrier metal layer by performing a PECVD process using a source gas to deposit a copper layer. A first copper layer(6) is formed thereon by growing the nucleus. A second copper layer(7) is formed on the entire surface including the contact hole. The second and the first copper layers are patterned by a photo-etching process using a metal line mask and a metal line is formed thereby.