发明名称 |
Semiconductor device with a collector contact in a depressed well-region |
摘要 |
A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. At least part of the active region is removed to form a shallow trench opening. A dielectric layer is formed proximate the active region at least partially within the shallow trench opening. At least part of the dielectric layer is removed to form a collector contact region. A collector contact may be formed at the collector contact region. The collector contact may be operable to electrically contact the buried layer.
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申请公布号 |
US6774455(B2) |
申请公布日期 |
2004.08.10 |
申请号 |
US20020262206 |
申请日期 |
2002.09.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BABCOCK JEFFREY A.;DIRNECKER CHRISTOPH;PINTO ANGELO;BALSTER SCOTT G.;SCHOBER MICHAEL;HAEUSLER ALFRED |
分类号 |
H01L21/331;H01L29/417;H01L29/73;H01L29/732;(IPC1-7):H01L29/737 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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