| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that a surface of a metal wiring layer is oxidized when photoresist is eliminated, and connection resistance increases, when SiCN and SiC are used as an etching stopper film, because etching selectivity of SiOC with SiCN and SiC is small. <P>SOLUTION: An organic insulating film composed of SiOCH, SiCNH and SiCH which is formed by using organic silane wherein C/Si ratio is at least 5 and molecular ratio is at least 100 as a raw material, a semiconductor device using the organic insulating film and, in particular, a semiconductor device having groove structure are obtained. In the conventional case, relative permitivity of SiC and SiCN which is generally investigated is about 4.5 to 5, and that of SiOC is about 2.8 to 3.0. By miniaturization of a device, microfabrication of wiring size and wiring interval follows on forward. Further reduction of relative permitivity to be obtained becomes possible. A method for manufacturing an SiOCH film of low relative permitivity and high quality is obtained. By applying the SiOCH film to a low relative perimitivity insulating film of multilayer wiring of a semiconductor device, structure wherein effective relative permitivity is small can be obtained while reliability of wiring is maintained. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
