发明名称 |
Methods of forming semiconductor structures, and articles and devices formed thereby |
摘要 |
A method of forming a semiconductor structure is described that includes etching a first metal layer at the bottom of a via in a first insulating layer to expose a second metal layer, wherein the first metal layer is on the second metal layer, and wherein the etching of the first metal layer is not reactive-ion etching. Methods of making semiconductor devices and electronic devices are also described.
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申请公布号 |
US6770566(B1) |
申请公布日期 |
2004.08.03 |
申请号 |
US20020151127 |
申请日期 |
2002.05.16 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
AHN YONGCHUL;WONG KAICHIU |
分类号 |
H01L21/311;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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