| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for an AND-type flash memory cell by which the high-degree integration of a diffusion-layer wiring density can be obtained. SOLUTION: The manufacturing method for the AND-type flash memory cell is constituted by containing a stage, in which a pad oxide film and a pad nitride film are laminated on a silicon substrate, the nitride film is patterned selectively, and a pad nitride-film pattern is formed; a stage in which the ions of impurities are implanted into the substrate, and a junction forming region is formed; a stage in which an insulating film spacer is formed on the side wall of the pattern; a stage in which the pad oxide film and the substrate are removed selectively while using the spacer as a mask, and a trench dividing the junction forming region is formed; a stage in which a gap-burying insulating film is formed on the top face of the whole structure comprising the trench; and a stage in which the spacer containing the gap-burying insulating film, a pad nitride-film pattern and the pad oxide film are removed selectively, and a trench-element isolation film and the junction region are formed simultaneously. COPYRIGHT: (C)2004,JPO&NCIPI
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