| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a CMOS image sensor capable of improving a dark current property at the time of operation by minimizing the damage of a photodiode region caused by the dry etching of an insulating film for spacer formation. SOLUTION: On the top surface of an epitaxial layer 31 existing on a substrate 30, in which an field insulating film 32 and a gate electrode 33a are formed, an oxide film 35 for ion inplantation is formed, then photodiode regions 37 and 38 are formed. After the removal of a mask 36 for forming the photodiode region, insulating films for spacer formation comprising a nitride film 39 and an oxide film 40 formed as layers in that order are formed. After the dry etching of the oxide film 40, a oxide film spacer 41 is formed on the nitride film 39 at the both side wall of the gate 33a. The nitride film 39 that has been exposed by dry etching is removed by wet etching. A floating diffusion area 43 is formed in the surface layer of the epitaxial layer 31 on the one side of the gate electrode 33a located on the opposite side of the photodiode regions 37 and 38. COPYRIGHT: (C)2004,JPO&NCIPI
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