| 摘要 |
PURPOSE: A fabrication method of an array substrate is provided to form the first organic insulating film having the first contact hole and the second organic insulating film having the second contact hole, and to form a drain electrode and a pixel electrode on the second organic insulating film. CONSTITUTION: A poly-Si layer(121) is deposited on the first substrate(110). A gate insulating film(122) is on the poly-Si layer(121), and a gate electrode(123) is on the gate insulating film(122). An 'n' or a 'p' channel is formed by doping the poly-Si layer(121). An interlayer insulating film(124) consisting of the first and second contact holes is accumulated on the gate insulating film(122). A source electrode(125) is electrically connected with the poly-Si layer(121) through the first contact hole, and a drain electrode(126) is electrically connected with the poly-Si layer(121) through the second contact hole.
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