| 摘要 |
An LDMOS transistor includes drift regions from the body to the drain and the source terminals and is capable of handling high voltages at both the source and drain terminals. In one embodiment, a transistor includes a body region formed in a first well, a conductive gate formed over a first dielectric layer where the first dielectric layer overlies the first well, a second dielectric layer encircling the first dielectric layer, a drain region abutting one edge of the second dielectric layer and a source region abutting an opposite edge of the second dielectric layer. A first drift region is formed between the source region and the body region while a second drift region is formed between the drain region and the body region. Accordingly, the drain and source region of the transistor is interchangeable. In one embodiment, the first and second dielectric layers are a contiguous field oxide layer.
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