发明名称 CAVITY SHAPES FOR PLASMA-ASSISTED PROCESSING
摘要 Methods and apparatus for selectively processing objects with a plasma formed in a cavity (12) with electromagnetic radiation. In one embodiment, a method can be provided that includes placing the object in the cavity (12) such that a first gap (525) is formed, having a thickness less than about lambda/4, between a first surface region (510) of the object and the inner surface of the cavity, and a second gap (526) is formed, having a thickness at least about lambda /4, between a second surface region (520) and the inner surface, introducing gas into the cavity; and irradiating the cavity with the radiation to form a plasma in the second gap but not in the first gap.
申请公布号 WO03096383(A3) 申请公布日期 2004.07.22
申请号 WO2003US14137 申请日期 2003.05.07
申请人 DANA CORPORATION;KUMAR, SATYENDRA;KUMAR, DEVENDRA 发明人 KUMAR, SATYENDRA;KUMAR, DEVENDRA
分类号 B01J7/00;A62D3/00;B01D53/86;B01D53/92;B01J19/08;B01J19/12;B01J37/34;B22F3/105;C01B3/02;C21D1/06;C21D1/09;C21D1/38;C22B4/00;F01N3/08;F01N3/10;F01N3/20;F01N3/24;F01N3/28;F01N3/30;F01N9/00;F01N13/10;F27B17/00;F27D3/12;F27D11/08;F27D11/12;G21K5/00;H01J37/32;H01M8/06;H05B6/68;H05B6/78;H05B6/80;H05H1/24;H05H1/46 主分类号 B01J7/00
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