PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor having an air isolation structure exhibiting temperature characteristics adaptable to production of semiconductor and employing a sacrifice polymer film capable of forming a thick film of 1μm or above easily while reducing metal impurities. SOLUTION: The process for fabricating a semiconductor device having an air isolation structure comprises a step for removing sacrifice polymer existing between metallizations from an air isolation structure precursor where the sacrifice polymer including a repetition of one kind or more than one kind selected from cyclohexane based monomers and deposited by vapor phase polymerization at a heat resistant temperature of 250°C or above and a thermal decomposition temperature of 500°C or below is arranged between metallizations on a substrate. COPYRIGHT: (C)2004,JPO&NCIPI