发明名称 |
Method of fabricating a shallow trench isolation structure |
摘要 |
A method of fabricating a well-filled STI Structure in a semiconductor substrate. A trench is formed in the semiconductor substrate. A liner oxide and a liner nitride are formed on the bottom and sidewall of the trench subsequently. A HDP oxide layer is deposited in the trench conformally to fill a portion of the trench. A layer of poly-silicon is deposited over the HDP oxide layer conformally. The semiconductor substrate is subjected to a thermal treatment to oxidize the poly-silicon. The surface of the semiconductor substrate is planarized to form a shallow trench isolation structure. The trench is well filled by the oxidized poly-silicon and the HDP oxide without voids and seams.
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申请公布号 |
US2004142562(A1) |
申请公布日期 |
2004.07.22 |
申请号 |
US20030345326 |
申请日期 |
2003.01.16 |
申请人 |
CHEN ZHEN-LONG;LIN PING-WEI;NIEH CHUN-FENG;CHENG FUNG-HSU |
发明人 |
CHEN ZHEN-LONG;LIN PING-WEI;NIEH CHUN-FENG;CHENG FUNG-HSU |
分类号 |
H01L21/762;(IPC1-7):H01L21/302;H01L21/311;H01L21/461 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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地址 |
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