P-TYPE NITRIDE SEMICONDUCTOR STRUCTURE AND BIPOLAR TRANSISTOR

摘要

A p-type nitride semiconductor structure having an ohmic characteristic greatly improved by re-growing a p-type nitride semiconductor containing In on a p-type nitride semiconductor that have received process-induced damage and thereby remedying the process-induced damage is disclosed. Further, a p-type nitride semiconductor bipolar transistor having a greatly improved current gain and a greatly improved rise voltage is also disclosed. A p-type nitride semiconductor layer (8) containing In is formed on a p-type nitride semiconductor (2) processed by etching. In a bipolar transistor having a base layer of p-type nitride semiconductor, a p-type InGaN base layer (8) containing In is formed by regrowth on a p-type InGaN base layer (2) exposed by etching an emitter layer (1).