发明名称 |
Semiconductor package, method of manufacturing the same, and semiconductor device |
摘要 |
A wiring layer for serving as a first electrode layer of a capacitor portion patterned in a predetermined shape on an insulative base member is formed. A resin layer for serving as a dielectric layer of the capacitor portion is formed on a surface of the wiring layer using an electrophoretic process. Another wiring layer for serving as a second electrode layer of the capacitor portion patterned in a predetermined shape by patterning on the insulative base member inclusive of the resin layer is formed.
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申请公布号 |
US6764931(B2) |
申请公布日期 |
2004.07.20 |
申请号 |
US20020225305 |
申请日期 |
2002.08.22 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
IIJIMA TAKAHIRO;ROKUGAWA AKIO;SHIMIZU NORIYOSHI |
分类号 |
H05K3/46;H01L21/48;H01L23/12;H01L23/498;H01L23/64;H05K1/16;(IPC1-7):H01L21/20 |
主分类号 |
H05K3/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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