METHOD FOR FORMING PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern by which a resist pattern formed on a substrate can be easily and finely processed with high dimensional control over the limit of lithography. SOLUTION: The method includes processes of: disposing a mask on the surface of a substrate and irradiating a resist film with first energy rays through the mask; developing the resist film after irradiating with the first energy rays to form a first resist pattern on the substrate surface; irradiating the first resist pattern with second energy rays without using a mask; and heat treating the first resist pattern after irradiating with the second energy rays to form a second resist pattern smaller than the first resist pattern; and patterning the objective film by using the second resist pattern as a mask. COPYRIGHT: (C)2004,JPO&NCIPI