发明名称 Thin film transistor for use in active matrix type organic light emitting diode device
摘要 An organic light emitting diode device includes an array layer having a plurality of thin film transistors, an organic light emitting diode formed on a second substrate, a plurality of connection patterns disposed between the first and second substrates, the connection pattern connecting a respective thin film transistor to the corresponding organic light emitting diode and a sealant between the first and second substrates, wherein each thin film transistor includes: a gate electrode on the first substrate, the gate electrode having an opening in the middle thereof; a gate insulating layer over the gate electrode; a semiconductor layer on the gate insulating layer above the gate electrode; a drain electrode on the semiconductor layer corresponding to the opening of the gate electrode; and first and second source electrodes formed respectively on both sides of the semiconductor layer and spaced apart from the drain electrode.
申请公布号 US2004135164(A1) 申请公布日期 2004.07.15
申请号 US20030742757 申请日期 2003.12.23
申请人 LG.PHILIPS LCD CO., LTD. 发明人 PARK JAE-YONG;CHO SO-HAENG
分类号 H05B33/00;H01L27/12;H01L27/32;H01L29/00;H01L29/417;H01L29/423;H01L29/786;H01L33/00;(IPC1-7):H01L33/00 主分类号 H05B33/00
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