| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method by which an electrode for semiconductor device having a very narrow width can be formed without using any special mask nor high-accuracy aligner, but only using the conventional aligner. <P>SOLUTION: After a semiconductor substrate is prepared by successively laminating a first semiconductor layer which does not react to an electrode metal and a second semiconductor layer which reacts to the electrode metal upon a substrate, an etching mask is formed on the surface of the second semiconductor layer and a ridge structure is formed by partially etching off the second semiconductor layer. Then the electrode metal is adhered to the side wall section of the ridge structure. Thereafter, the electrode metal is diffused into the second semiconductor layer through heat treatment. Consequently, the electrode having the very narrow width can be formed by removing the portions of the second semiconductor layer etc., into which the electrode metal is not diffused. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
