| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic chuck for holding a semiconductor wafer, which can avoid an increase in leakage current even when the number of wafers to be processed exceeds 10,000 and can avoid dielectric breakdown in a deposition apparatus or an etching apparatus of CVD, PVD, sputtering, SOD or SOG for use in manufacturing a semiconductor. SOLUTION: In the electrostatic chuck, one of the main surfaces of a plate-shaped ceramic member is used to carry a wafer thereon, and an attraction electrode is provided within the ceramic member or on the other main surface of the ceramic member. A voltage of 3 kV is applied to the attraction electrode to attract the wafer onto the wafer carrier surface. A ratio (I<SB>1</SB>/I<SB>0</SB>) of a current I<SB>1</SB>between the attraction electrode and the wafer at a pressure of 5 Torr to a current I<SB>0</SB>between the attraction electrode and the wafer at atmospheric pressure is set at 40 or less. COPYRIGHT: (C)2004,JPO&NCIPI |
