| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material and a method for forming a pattern by which a resist pattern with high sensitivity and high resolution can be stably formed in the process of forming a thick positive resist pattern by exposing to UV rays at ≥300 nm wavelength on a substrate coated with a metal. <P>SOLUTION: The resist material contains: (A) a polymer compound having a repeating unit expressed by formula (1) and an acid unstable group; (B) an acid generating agent comprising (5-(4-methylpenyl)sulfonyloxyimino-5H-thiophen-2-ylidene)-(2-methylphenyl)acetonitrile or the like; and (C) benzotriazoles. UV rays at ≥300 nm wavelength are used as the exposure light source. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
