METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To be capable of realizing a micropattern without causing a resist break. SOLUTION: A silicon oxide film 2 is formed on a semiconductor wafer 1 which consists of silicon. After a resist film including carbon is formed on the silicon oxide film 2, a resist pattern 3 is formed by patterning the formed resist film. Subsequently, the resist pattern 3 is exposed to sulfer dioxide gas. After this, the silicon oxide film 2 is dry-etched with the resist pattern 3 exposed to the sulfer dioxide gas as a mask. COPYRIGHT: (C)2004,JPO&NCIPI