| 发明名称 |
HIGH WITHSTAND VOLTAGE SEMICONDUCTOR ELEMENT |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a dielectric isolation structured high withstand voltage semiconductor element capable of obtaining a sufficient high withstand voltage characteristic by a thin active layer. <P>SOLUTION: The semiconductor element is provided with a semiconductor substrate and the active layer having a thickness of 0.3μm or less comprising a high resistance semiconductor which is formed on the semiconductor substrate via an insulator film. For the active layer, impurity concentration distribution in a lateral direction forms steps varying from 2 to 10 steps. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
| 申请公布号 |
JP2004193630(A) |
申请公布日期 |
2004.07.08 |
| 申请号 |
JP20040064661 |
申请日期 |
2004.03.08 |
| 申请人 |
TOSHIBA CORP |
发明人 |
MATSUSHIRO TOMOKO;YASUHARA NORIO;NAKAGAWA AKIO;YAMAGUCHI YOSHIHIRO;OMURA ICHIRO;FUNAKI HIDEYUKI |
| 分类号 |
H01L29/74;H01L21/02;H01L21/336;H01L27/12;H01L29/06;H01L29/40;H01L29/786;H01L29/861;(IPC1-7):H01L29/861 |
主分类号 |
H01L29/74 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
