| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image sensing device in which signal charge generated below a photodiode is hardly absorbed by regions other than the photodiode. SOLUTION: The solid-state image sensing device is constituted by the arrangement of a plurality of pixels wherein each pixel comprises a photodiode, a first transistor, and a second transistor. The photodiode is constituted of a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region wherein both conductivity types are mutually opposite. The first transistor has a drain region of the first conductivity type formed in the second-conductivity-type semiconductor region and transfers the signal charge generated in the photodiode to the drain region. The second transistor has a source region and a drain region of the first conductivity type formed in the second-conductivity-type semiconductor region. Potential barriers are provided by forming regions of the second conductivity type below the drain region of the first transistor and under the source region and/or the drain region of the second transistor. By providing the potential barriers in the pixel structure, the signal charge is hardly absorbed by regions other than the photodiode, thereby a solid-state image sensing device of high sensitivity can be obtained. COPYRIGHT: (C)2004,JPO&NCIPI
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