METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent collapse of a storage node electrode by removing a lower oxide layer using second wet-etching without using an additional mask. CONSTITUTION: An interlayer dielectric(42) is formed on a substrate(40). The first oxide layer(48) having the capacitor height of 50-90% is formed on the resultant structure. An etch barrier layer(50) made of a nitride layer is formed on the first oxide layer. The second oxide layer(52) is formed on the etch barrier layer. A storage node contact hole is formed by etching the second oxide layer, the nitride layer and the first oxide layer. A storage node electrode(58) is formed in the storage node contact hole. The second oxide layer of a cell region is removed by first wet-etching. The etch barrier layer and the first oxide layer of the cell region are removed by second wet-etching.