METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor memory device is provided to omit a contact hole forming process by forming a contact plug using an SEG(Selective Epitaxial Growth). CONSTITUTION: A gate insulating layer(18) and a gate electrode are formed on a silicon substrate(10). A bit line and storage node contact plug(24a,24b) are formed on the substrate to align the gate electrode by using an SEG. A source/drain(25a,25b) are formed in the substrate under the contact plugs. A lower interlayer dielectric(28) and the first upper interlayer dielectric(29) are sequentially formed on the resultant structure. A bit line(30) for contacting the bit line contact plug is formed through the first upper interlayer dielectric. The second upper interlayer dielectric(32) is formed on the first upper interlayer dielectric. A storage node contact(38) for contacting the storage node contact plug is formed through the first and second upper interlayer dielectric.