| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to improve reliability by sequentially filling a photoresist layer and an organic ARC(Anti-Reflective Coating) layer in a via contact hole. CONSTITUTION: The first interlayer dielectric(13) is formed to expose a lower metal line(11). The first etch stop layer(15), the second interlayer dielectric(17), the second etch stop layer(19), the third interlayer dielectric(21), and a hard mask(23) are sequentially stacked on the resultant structure. A via contact hole is formed to expose the first etch barrier layer by etching the stacked structure. A photoresist layer(27) is partially filled in the via contact hole, and an organic ARC layer(29) is formed on the resultant structure. The second etch barrier layer and the photoresist layer are exposed by etching the organic ARC layer, the third etch barrier layer, the hard mask and the third interlayer dielectric. The photoresist layer is removed and the first etch barrier layer is etch-backed, thereby forming an upper metal line region.
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