CMOS IMAGE SENSOR TO REDUCE DARK CURRENT BY BLOCKING HEAVY METAL IONS

摘要

PURPOSE: A CMOS image sensor is provided to improve dark current by blocking heavy metal ions from a metal line using a nitride layer. CONSTITUTION: A substrate(201) is provided with a desired structure including a light receiving device. An interlayer dielectric(210) is formed on the resultant structure. A metal line(212) is formed on the interlayer dielectric. A nitride layer(211) is formed between the metal line and the interlayer dielectric, thereby blocking the flow of heavy metal ions from the metal line.