METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce soft error by forming a local capacitor in manufacturing process of an SRAM. CONSTITUTION: The first insulating layer(25) with the first metal plug(30) is formed on a substrate(10) with gate lines(20). The first etch stop layer(35) and the second insulating layer(40a) are formed on the resultant structure. Metal lines(45) are formed by selectively etching the second insulating layer. A dielectric film(50) is formed on the second insulating layer and selectively etched to expose the metal line. A capacitor plate(60) is formed to connect the exposed metal line. The second etch stop layer(65) and the third insulating layer(70a) are formed on the resultant structure. The second metal plug(75) is formed by selectively etching the third insulating layer.