METHOD FOR FORMING DIELECTRIC LAYER AND METHOD FOR FABRICATING CAPACITOR USING THE SAME

摘要

PURPOSE: A method for forming a dielectric layer and a method for fabricating a capacitor using the same are provided to increase the productivity of wafers and reduce the manufacturing cost by forming a multi-layered dielectric layer including an Al2O3 layer as a bottom layer within one chamber. CONSTITUTION: A semiconductor substrate(102) is loaded into an ALD(Atomic Layer Deposition) reactor(100). An Al2O3 layer(104a) is formed on a surface of the semiconductor substrate by supplying Al source gas and steam of H2O into the inside of the ALD reactor. A TiO2 layer(104b) is formed on a surface of the Al2O3 layer by supplying Ti source gas and O3 gas into the inside of the ALD reactor. The Ti source gas is formed with alkoxide-based Ti(O-iPr).