| 摘要 |
PURPOSE: A method for forming an align mark is provided to improve overlay accuracy by performing pre-exposure processing before main-exposure processing. CONSTITUTION: A reticle(20) having a reticle align mark is heated by pre-exposing using an align beam(10). By performing main-exposure processing using the align beam, the reticle align mark on the reticle is incident to a wafer align mark(45) on a semiconductor wafer(40) via a projection lens.
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