| 摘要 |
PROBLEM TO BE SOLVED: To provide a bias circuit for semiconductor element for preventing destruction of a semiconductor element. SOLUTION: The bias circuit for semiconductor element including: a FET 12 having a plurality of terminals; and a bias power supply circuit 11 for applying a bias voltage to a gate terminal G of the FET 12, is provided with a protection circuit 15 connected to a midpoint C2 between the gate terminal G and the bias power supply circuit 11 and including a diode 15b that is conductive when a voltage at the midpoint C2 is greater than a prescribed value. COPYRIGHT: (C)2004,JPO&NCIPI
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