Gate electrode of a semiconductor device and method of forming the same

摘要

Disclosed are an electrode of a semiconductor device and a method of forming the same. A polysilicon layer is formed on a semiconductor substrate. An amorphous silicon capping layer is then formed on the polysilicon layer. A silicide layer is formed on the capping layer. The capping layer prevents chlorine ions from diffusing downward to the polysilicon layer. Accordingly, abnormal growth of the polysilicon layer can be prevented, thus improving the stability of the electrical characteristics of a semiconductor device electrode.