| 摘要 |
PURPOSE: A semiconductor device for protecting ESD(ElectroStatic Discharge) is provided to improve the ESD property by forming an additional ion-implanted region in a PESD(P-type ESD) region. CONSTITUTION: A gate polysilicon layer(22) is formed on a semiconductor substrate(21). A source/drain region(23,24) are formed in the substrate to align the gate polysilicon layer. A PESD region(27) is formed at the lower portion of the drain region to improve the ESD protection property. An additional ion-implanted region(26) is formed in the PESD region to change the profile of ion-implantation.
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