| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to control a short channel effect of a highly integrated semiconductor device by reducing the depth and diffusion of an LDD(lightly doped drain) diffusion layer. CONSTITUTION: A semiconductor substrate(102) having a gate electrode(110) is prepared. An LDD oxide layer(112) is deposited on the resultant structure. An LDD ion implantation process is performed to form an ion implantation layer(114) in the LDD oxide layer exposed to both sides of the gate electrode. A heat treatment process is performed to diffuse the dopants implanted into the ion implantation layer to the inside of the semiconductor substrate and to form an LDD diffusion layer. After an LDD nitride layer is deposited on the resultant structure, an etch process is performed to form an LDD spacer(120) on both sidewalls of the gate electrode. A source/drain ion implantation process is performed to form a high density diffusion layer(122) in the semiconductor substrate so that a source/drain diffusion layer(124) composed of the LDD diffusion layer and the high density diffusion layer is formed. The ion implantation layer remaining on the source/drain diffusion layer and the LDD oxide layer remaining on the gate electrode are eliminated.
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