| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent a hump characteristic by rounding a top corner portion and a lower edge part of a STI(shallow trench isolation), and to prevent a defect inside a silicon substrate by reducing stress of the silicon substrate by a buffer layer. CONSTITUTION: A hard mask is deposited on the silicon substrate(100) and is patterned by a photolithography process. An ion implantation process is performed by using the patterned hard mask to form an ion implantation region even under the hard mask. An etch process is performed on the silicon substrate to form a trench. After a sacrificial oxide layer is formed on the sidewall of the trench, a buffer layer is deposited on the sacrificial oxide layer and the inside of the trench is filled with a gap-filling material. A planarization process is performed on the resultant structure having the deposited gap-filling material and the hard mask is eliminated.
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