Method and device for determining backgate characteristics

摘要

Backgate-characteristics determination method and device that make for curtailing the fabrication of semiconductor circuit elements having defective backgate-characteristics. Initially a first C-V curve 30 representing the relation between a voltage applied to the obverse face of a wafer 20 serving as a substrate for semiconductor circuit elements, and its capacitance, is found. Next, a second C-V curve 32 is found through applying a voltage to the reverse face of the wafer 20. The backgate characteristics for the semiconductor circuit elements are determined based on a voltage-shift amount 34 for the wafer 20, found from the first C-V curve 30 and the second C-V curve 32.