METHOD FOR FORMING FUSE BOX OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fuse box of a semiconductor device is provided to be capable of restraining the fuse box from being over-etched and simplifying the manufacturing processes of the fuse box. CONSTITUTION: A fuse box(12) and a pad(13) are formed on a semiconductor substrate(11). At this time, the fuse box is spaced apart from the pad. A passivation layer(14) is thickly formed on the entire surface of the resultant structure for completely enclosing the fuse box and the pad. A photoresist layer is formed on the passivation layer. A photoresist pattern is formed by selectively patterning the photoresist layer using an exposure mask. The passivation layer is selectively etched for exposing the pad by using the photoresist pattern as an etching mask.