发明名称 Method for forming a passivation layer for air gap formation and structure thereof
摘要 Dummy features (64, 65, 48a, 48b) are formed within an interlevel dielectric layer (36). Passivation layers (32 and 54) are formed by electroless deposition to protect the underlying conductive regions (44, 48a, 48b and 30) from being penetrated from the air gaps (74). In addition, the passivation layers (32 and 54) overhang the underlying conductive regions (44, 48a, 48b and 30), thereby defining dummy features (65a, 65b and 67) adjacent the conductive regions (48a, 44 and 48b). The passivation layers (32 and 54) can be formed without additional patterning steps and help minimize misaligned vias from puncturing air gaps.
申请公布号 US2004119134(A1) 申请公布日期 2004.06.24
申请号 US20020327403 申请日期 2002.12.20
申请人 GOLDBERG CINDY K.;FILIPIAK STANLEY MICHAEL;FLAKE JOHN C.;LII YEONG-JYH T.;SMITH BRADLEY P.;SOLOMENTSEV YURI E.;SPARKS TERRY G.;STROZEWSKI KIRK J.;YU KATHLEEN C. 发明人 GOLDBERG CINDY K.;FILIPIAK STANLEY MICHAEL;FLAKE JOHN C.;LII YEONG-JYH T.;SMITH BRADLEY P.;SOLOMENTSEV YURI E.;SPARKS TERRY G.;STROZEWSKI KIRK J.;YU KATHLEEN C.
分类号 H01L21/288;H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/288
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