| 摘要 |
1,151,227. Semi-conductor devices. WESTERN ELECTRIC CO. Inc. 7 July, 1966 [9 July, 1965], No. 30532/66. Heading H1K. [Also in Division C7] A planar diode consisting of a slice 11 of N- type silicon having a P-type surface region 12 is formed with a Ni coating 16 by forming a SiO 2 layer on the Si slice, removing it, by etching, from the selected area of the slice, dipping the entire surface in SnCl 2 and then PdCl 2 , etching to remove part of the SiO 2 layer together with its covering of SnCl 2 and PdCl 2 , and then plating in an electroless Ni bath to deposit Ni on the selected area which still retains its catalytic PdCl 2 coating. Contact material e.g. Ni, Au or Ag or successive layers of Pd, Rh and Ag may be applied to the Ni. |
