| 摘要 |
PROBLEM TO BE SOLVED: To easily and stably carry out the cleavage of a sapphire substrate and a group III nitride compound semiconductor layer into an excellent mirror surface degree. SOLUTION: A buffer layer constituted of a group III nitride compound semiconductor is formed on a sapphire (a) face substrate by a spattering method, and a group III nitride compound semiconductor layer having element functions is formed on the buffer layer in a well-known method. Then, the m axis of the sapphire substrate and the m axis of the group III nitride compound semiconductor layer can be made in parallel with each other. COPYRIGHT: (C)2004,JPO
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