发明名称 MANUFACTURING METHOD OF HIGH FREQUENCY CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for connecting metal films on the surface and the back of a substrate without disconnecting them in a manufacturing method of a membrane structure type high frequency circuit. SOLUTION: After sheath metal layers 106, 107 are formed over the entire back surface of the substrate including a membrane structure part, a resist 202 is formed on the membrane structure, and the metal film 108 is formed over an outer periphery of a through-hole and over the back surface of the substrate. Then, after the resist 202 on the membrane structure part is removed, the resist 203 is again formed on the outer periphery part of the through-hole and on the back surface of the substrate to remove the sheath metal layers 106, 107 of the membrane structure part by wet-etching thereof. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004179380(A) 申请公布日期 2004.06.24
申请号 JP20020343605 申请日期 2002.11.27
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 URABE TAKEHARU
分类号 H01L21/3065;H01L23/12;(IPC1-7):H01L23/12;H01L21/306 主分类号 H01L21/3065
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