发明名称 PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a pattern forming method capable of preventing pattern form deterioration of a copper thick film caused by variation in a resist pattern form in a Lithographie Galvanoformung Abformung-like process using a thick film resist layer formed by laminating light-sensitive films. <P>SOLUTION: In the pattern forming method comprising a process for forming the thick film resist layer 25 with a pattern on a substrate 10 by using a mask 30, the thick film resist layer 25 is formed, and then the side faces S of the thick film resist layer 25 are hardened by irradiating the side faces S with an electromagnetic wave. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004177837(A) 申请公布日期 2004.06.24
申请号 JP20020346690 申请日期 2002.11.29
申请人 NIKON CORP 发明人 ONO ICHIROU
分类号 G03F7/004;G03F7/40;H05K3/18 主分类号 G03F7/004
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