发明名称 BASE LAYER FILM FORMING MATERIAL FOR MULTILAYER RESIST PROCESS, AND WIRING FORMATION METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a base layer film material for a multilayer resist process which is excellent in durability against a photoresist developer solution, is removable by using a photoresist stripping liquid after used, and facilitates the rework of the substrate, and to provide a wiring formation method using the base layer film material. <P>SOLUTION: The base layer film material is prepared by incorporating as a resin component a resin having at least a substituent which leaves the end group to produce a sulfonic acid residue when specified energy is applied. As for the resin component, a compound having at least a repeating unit expressed by formula (1) is preferable. In formula (1), n represents an integer &ge;1, X represents a 1-10C straight-chain or branched alkyl chain, an aromatic or alicyclic cyclic alkyl chain, or an alkyl ester chain, and Y represents a substituent which generates a sulfonic acid residue when specified energy is applied. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004177668(A) 申请公布日期 2004.06.24
申请号 JP20020343870 申请日期 2002.11.27
申请人 TOKYO OHKA KOGYO CO LTD 发明人 NAKAMURA ETSUKO;WAKIYA KAZUMASA
分类号 G03F7/11;G03F7/26;H01L21/027;H01L21/3213 主分类号 G03F7/11
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