发明名称 DRY ETCHING SYSTEM AND DRY ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a dry etching system capable of forming a semispherical (convex lens shape) protruding part with a required gentle curved surface on a dielectric substrate surface such as glass by a dry etching method which dispenses with a resist that causes increase in the number of processes after etching. SOLUTION: In the dry etching system, a plurality of semispherical protruding parts 52 are formed on one main surface of a dielectric substrate 51. It comprises a first electrode 11 provided with a support surface 12 for sucking the dielectric substrate, a second electrode 21, a vacuum vessel 31, a gas supplying means 35 for supplying etching gas in the vacuum vessel, a high-frequency power source 40, and a negative pressure generating means 14 which introduces a negative pressure in each sucking hole provided on the support surface of the first electrode so that the dielectric substrate is sucked and held on the support surface. The support surface of the first electrode comprises a low impedance part 12b and a high impedance part 12a surrounded by the low impedance part. The high impedance part is formed at the position corresponding to a protruding part 51 which should be formed on one main surface of the dielectric substrate. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004179236(A) 申请公布日期 2004.06.24
申请号 JP20020340941 申请日期 2002.11.25
申请人 MATSUSHITA ELECTRIC IND CO LTD;TOYO COMMUN EQUIP CO LTD 发明人 ARITA KIYOSHI
分类号 G02F1/1333;B81C99/00;G02B3/00;H01L21/3065;(IPC1-7):H01L21/306;B81C5/00 主分类号 G02F1/1333
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