发明名称 |
Polymer for chemically amplified resist and chemically amplified resist composition containing the same |
摘要 |
Disclosed is a polymer for use in a chemically amplified resist, a resist composition including such a polymer is suitable for use in a chemically amplified resist, which is sensitive to KrF or ArF excimer laser and forms a photoresist pattern having low dependence on and good adhesion to substrate, high transparency in the wavelength range of the above radiation, strong resistance to dry etching, and excellencies in sensitivity, resolution and developability. The resist composition can have a stronger etching resistance with a maximized content of unsaturated aliphatic ring in the polymer and a reduced edge roughness of the photoresist pattern with an alkoxyalkyl acrylate monomer employed.
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申请公布号 |
US6753126(B2) |
申请公布日期 |
2004.06.22 |
申请号 |
US20020073693 |
申请日期 |
2002.02.11 |
申请人 |
KOREA KUMHO PETROCHEMICAL CO., LTD. |
发明人 |
PARK JOOHYEON;SEO DONGCHUL;LEE JONGBUM;JEON HYUNPYO;KIM SEONGJU |
分类号 |
G03F7/004;C08F212/08;C08F216/12;C08F220/18;C08F220/28;C08K5/42;G03F7/039;H01L21/027;(IPC1-7):G03C1/73;G03F7/20;C08F218/02 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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