| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device and a polishing method wherein a device formation region on a semiconductor substrate in which region any transistor is formed prevents any scratch or any damage from occurring therein or thereon. <P>SOLUTION: In a process of previously protecting the device formation region with a thin protective film 10 upon forming a shallow trench portion 20 serving as a device isolation region in the semiconductor substrate 1, the protective film 10 comprises a harder material than a nitrided film (Si<SB>3</SB>N<SB>4</SB>). Besides the nitrided film, there may be effective TiAlN, TiC, TiCN, DLC(diamond like carbon), and BN. <P>COPYRIGHT: (C)2004,JPO |
