| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to be capable of preventing the punch of an upper electrode due to the step between the upper electrode and a plug as the second and third contact hole are formed. CONSTITUTION: The first interlayer dielectric(211) is deposited on a semiconductor substrate(201) including a bit line(205). A trench(213) and the first contact hole are formed by selectively etching the first interlayer dielectric for defining a capacitor forming region and exposing the bit line, respectively. The first conductive layer is deposited on the entire surface of the resultant structure for filling the trench and the first contact hole. A storage node electrode(215a) and a plug(217) are formed in the trench and the first contact hole by carrying out a CMP(Chemical Mechanical Polishing) process on the first conductive layer. A capacitor(215) is completed by sequentially forming a dielectric layer(215b) and an upper electrode(215c) on the storage node electrode. The second interlayer dielectric(219) is deposited on the resultant structure. The second and third contact hole(223,221) are formed in the second interlayer dielectric for exposing the upper electrode and the plug, respectively.
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