| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a poly spacer from being generated at the sidewall of a trench in a dummy pattern region by filling the trench with an HDP(High Density Plasma) oxide layer and carrying out the process for a gate electrode. CONSTITUTION: A pad oxide and nitride pattern are formed on a semiconductor substrate(31). The semiconductor substrate is defined with a cell and dummy pattern region. A trench(34) is formed by etching the semiconductor substrate using the pad oxide and nitride pattern as an etching mask. An HDP oxide layer(35) is formed in the trench. The pad oxide and nitride layer are removed from the resultant structure. A gate oxide layer(36) and a polysilicon layer(37) are sequentially formed on the resultant structure. Then, a gate electrode is formed by selectively etching the polysilicon layer and gate oxide layer.
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