SILICON NITRADE CHARGE TRAPPING MEMORY DEVICE

摘要

The present invention is a method and system for erasing a nitride memory device. In one embodiment of the present invention, an isolated P-well (510) is formed in a semiconductor substrate (529). A plurality of N-type impurity concentrations (550, 555) are formed in the isolated P-well (510) and a nitride memory cell (560) is fabricated between two of the N-type impurity concentrations (550, 555). Finally, an electrical contact (590) is coupled to the isolated P-well (510).